An analytical model of triple-material double-gate metal-oxide-semiconductor field-effect transistor to suppress short-channel effects-Reference-Cited by-同舟云学术

An analytical model of triple-material double-gate metal-oxide-semiconductor field-effect transistor to suppress short-channel effects

Published:2015-01-09 Issue:1 Volume:29 Page:47-62
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int. J. Numer. Model.

Author:

Baral Biswajit¹,Das Aloke Kumar²,De Debashis³,Sarkar Angsuman⁴

Affiliation:

1. ECE Department; Silicon Institute of Technology; Bhubaneshwar India

2. ECE Department; Abacus Institute of Engineering & Management; Hooghly India

3. Department of CSE; West Bengal University of Technology; Salt Lake Kolkata India

4. ECE Department; Kalyani Government Engineering College; Kalyani India

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modelling and Simulation

Reference48 articles.

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2. Ultimate thin double-gate SOI MOSFETs;Ernst;IEEE Trans Electron Devices,2003

3. Fossum JG Wang LQ Yang JW Kim SH Trivedi VP Pragmatic design of nanoscale multi-gate CMOS IEDM Technical Digest. IEEE International, Electron Devices Meeting, 2004 2004 613 616 10.1109/IEDM.2004.1419236

4. Investigation of the novel attributes of a single-halo double gate SOI MOSFET: 2D simulation study;Reddy;Microelectron J,2004

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