Asymmetric halo and symmetric Single-Halo Dual-Material Gate and Double-Halo Dual-Material Gate n-MOSFETs characteristic parameter modeling-Reference-Cited by-同舟云学术

Asymmetric halo and symmetric Single-Halo Dual-Material Gate and Double-Halo Dual-Material Gate n-MOSFETs characteristic parameter modeling

Published:2012-01-27 Issue:1 Volume:26 Page:41-55
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int. J. Numer. Model.

Author:

Sarkar Angsuman¹,De Swapnadip²,Sarkar Chandan Kumar³

Affiliation:

1. Electronics and Communication Engineering Department; Kalyani Government Engineering College; Kalyani; 741235; India

2. Department of Electronics and Communication Engineering; Meghnad Saha Institute of Technology; Nazirabad; Kolkata; 107; India

3. Electronics and Telecommunication Engineering Department; Jadavpur University; Kolkata; 700032; India

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation

Reference24 articles.

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