A Subthreshold Surface Potential and Drain Current Model for Lateral Asymmetric Channel (LAC) MOSFETs
Author:
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering,Computer Science Applications,Theoretical Computer Science
Link
http://www.tandfonline.com/doi/pdf/10.1080/03772063.2006.11416478
Reference23 articles.
1. Potential design and transport property of 0.1-μm MOSFET with asymmetric channel profile
2. A low voltage graded-channel MOSFET (LV-GCMOS) for sub 1-volt microcontroller application
3. Exploration of velocity overshoot in a high-performance deep sub-0.1-μm SOI MOSFET with asymmetric channel profile
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1. Asymmetric halo and symmetric Single-Halo Dual-Material Gate and Double-Halo Dual-Material Gate n-MOSFETs characteristic parameter modeling;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2012-01-27
2. Modelling of parameters for asymmetric halo and symmetric DHDMG n-MOSFETs;International Journal of Electronics;2011-10
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