Subthreshold surface potential and drain current models for short-channel pocket-implanted MOSFETs-Reference-Cited by-同舟云学术

Subthreshold surface potential and drain current models for short-channel pocket-implanted MOSFETs

Published:2007-04 Issue:4 Volume:84 Page:653-662
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Baishya Srimanta,Mallik Abhijit,Sarkar Chandan Kumar

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. Threshold voltage modeling and the subthreshold regime of operation of short-channel MOSFETs

2. Ion-implanted complementary MOS transistors in low-voltage circuits

3. Design of ion-implanted MOSFET's with very small physical dimensions

4. Models for subthreshold and above-threshold currents in 0.1-μm pocket n-MOSFETs for low-voltage applications

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