Achieving High Field-Effect Mobility in Amorphous Indium-Gallium-Zinc Oxide by Capping a Strong Reduction Layer
Author:
Publisher
Wiley
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Reference27 articles.
1. Role of Gallium Doping in Dramatically Lowering Amorphous-Oxide Processing Temperatures for Solution-Derived Indium Zinc Oxide Thin-Film Transistors
2. Mutual Ferromagnetic-Ferroelectric Coupling in Multiferroic Copper-Doped ZnO
3. Hollow Urchin-like ZnO thin Films by Electrochemical Deposition
4. Fully Transparent Thin-Film Transistor Devices Based on SnO2 Nanowires
5. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
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