P-14: Prevention of Indium Segregation in BCE Type InGaZnO TFTs with Titanium Source/Drain
Author:
Affiliation:
1. Dept. of Materials Engineering; Korea Aerospace University; 100, Hwajeon-dong, Deogyang-gu Goyang-si Gyeonggi-do Korea 412-719
Publisher
Wiley
Reference12 articles.
1. Effect of the Chlorine Ion on Wet Etching of Molybdenum Tantalum Alloy Thin Film in Phosphoric Acid Solution;Lee;Science of Advanced Materials,2016
2. A Study on Chemical and Mechanical Properties of NiCrSn Films for Flexible Copper Interconnect;Park;Science of Advanced Materials,2016
3. A Study on a Relationship between Sputtering Condition and Electrochemical Property of Molybdenum Thin Films in Phosphoric Acid Solution;Seo;Science of Advanced Materials,2016
4. Novel Fabrication of Back Channel Etching Type InGaZnO Thin Film Transistors with MoTa Source/Drain;Kim;Nanoscience and Nanotechnology Letters,2016
5. Effects of Ultra-Violet Wet Annealing on Electrical Performance of Back Channel Etching Cu/Mo/IGZO 4 Mask Thin Film Transistor;Kim;Science of Advanced Materials,2016
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effects of Source/Drain Electrodes on the Performance of InSnO Thin-Film Transistors;Micromachines;2022-11-02
2. Tailored amorphous ITAZO transparent conductive electrodes;Materials Science in Semiconductor Processing;2019-02
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