Novel Fabrication of Back Channel Etching Type InGaZnO Thin Film Transistors with MoTa Source/Drain-Reference-Cited by-同舟云学术

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Novel Fabrication of Back Channel Etching Type InGaZnO Thin Film Transistors with MoTa Source/Drain

Published:2016-07-01 Issue:7 Volume:8 Page:572-576
ISSN:1941-4900
Container-title:Nanoscience and Nanotechnology Letters
language:en
Short-container-title:Nanosci Nanotechnol Lett

Author:

Kim Byoung O.,Kim Jeong-Hyun,Choe Heehwan,Jeon Jae-Hong,Kim Soo-Hyun,Seo Jong Hyun

Publisher

American Scientific Publishers

Subject

General Materials Science

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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