27.3: Invited Paper: Electrochemical study on wet etching of copper/molybdenum alloys in thin film transistors
Author:
Affiliation:
1. Dept. of Materials Engineering Korea Aerospace University Goyang-si Gyeonggi-do Korea
2. Cuprum Materials, Korea Aerospace University Goyang-si Gyeonggi-do Korea
Funder
Ministry of Trade, Industry and Energy
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.13468
Reference6 articles.
1. Novel Fabrication of Back Channel Etching Type InGaZnO Thin Film Transistors with MoTa Source/Drain
2. Effects of Ultra-Violet Wet Annealing on Electrical Performance of Back Channel Etching Cu/Mo/IGZO 4 Mask Thin Film Transistor
3. Effect of the Chlorine Ion on Wet Etching of Molybdenum Tantalum Alloy Thin Film in Phosphoric Acid Solution
4. The Electrochemical Behavior of Mo–Ta Alloy in Phosphoric Acid Solution for TFT-LCD Application
5. A Study on a Relationship Between Sputtering Condition and Electrochemical Property of Molybdenum Thin Films in Phosphoric Acid Solution
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