Author:
Lee Sang-Hyuk,Kim Byoung O.,Seo Jong Hyun
Abstract
Molybdenum–tantalum alloy thin film is a suitable material for the higher corrosion resistance and low resistivity for gate and data metal lines. In this study, Mo–Ta alloy thin films were prepared by using a DC magnetron co-sputtering system on a glass substrate. An abrupt
increase in the etching rates of low Mo–Ta alloys was observed. From the observed impedance analysis, the defect densities in the MoTa oxide films increased from 5.4×1021 (cm−3) to 8.02×1021 (cm−3) up to the 6 at% of
tantalum level; and above the 6 at% of tantalum level, the defect densities decreased. This electrochemical behavior is explained by the mechanical instability of the MoTa oxide film.
Publisher
American Scientific Publishers
Subject
Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering
Cited by
3 articles.
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