Abstract
Oxide thin-film transistors (TFTs) are of increasing interest in the field of advanced displays. In this work, we explore Al, InSnO (ITO), Ti, and Mo as source/drain electrodes of ITO TFTs. A comparison study is conducted on the electrical properties of ITO TFTs with the four categories of source/drain electrodes. Interestingly, the ITO TFT with an Al source/drain electrode exhibits better device performance, such as a field-effect mobility (μFE) of 26.45 cm2/Vs, a reasonable turn-on voltage (VON) of 2.7 V, and a steep subthreshold swing (SS) of 201.50 mV/decade. The contact properties of ITO TFTs are further analyzed, and the results show that the device with an Al electrode exhibits lower contact resistance than the other devices. However, the devices with the four electrode materials all reveal excellent stability under negative bias illumination stress (NBIS) with |ΔVTH| < 1 V. This work paves the way for the practical applications of ITO TFTs in next-generation displays.
Funder
MOST of China
National Natural Science Foundation of China
Shenzhen Science and Technology Innovation Committee
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering
Reference42 articles.
1. Oxide semiconductor thin-film transistors: A review of recent advances;Fortunato;Adv. Mater.,2012
2. Liu, W.-S., Hsu, C.-H., Jiang, Y., Lai, Y.-C., and Kuo, H.-C. Improving device characteristics of dual-gate IGZO thin-film transistors with Ar–O2 mixed plasma treatment and rapid thermal annealing. Membranes, 2022. 12.
3. Electrical instability of double-gate a-IGZO TFTs with metal source/drain recessed electrodes;Baek;IEEE Trans. Electron. Devices,2014
4. Low subthreshold swing and high mobility amorphous Indium-Gallium-Zinc-Oxide thin-film transistor with thin HfO2 gate dielectric and excellent uniformity;Samanta;IEEE Electron. Device Lett.,2020
5. Compensating pixel circuit driving AMOLED display with a-IGZO TFTs;Lin;IEEE Electron. Device Lett.,2013
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献