High performance a-IGZO thin-film transistors with mf-PVD SiO2 as an etch-stop-layer-Reference-Cited by-同舟云学术

High performance a-IGZO thin-film transistors with mf-PVD SiO2 as an etch-stop-layer

Published:2014-01 Issue:1 Volume:22 Page:23-28
ISSN:1071-0922
Container-title:Journal of the Society for Information Display
language:en
Short-container-title:Jnl Soc Info Display

Author:

Nag Manoj¹²,Steudel Soeren¹,Bhoolokam Ajay¹²,Chasin Adrian¹²,Rockele Maarten¹²,Myny Kris¹,Maas Joris³,Fritz Thomas⁴,Trube Jutta⁴,Groeseneken Guido¹²,Heremans Paul¹²

Affiliation:

1. IMEC; Kapeldreef 75 3001 Leuven Belgium

2. ESAT; Katholieke Universiteit Leuven; Kasteelpark Arenberg 10 3001 Leuven Belgium

3. Holst Centre; High Tech Campus 31 5656 AE Eindhoven the Netherlands

4. Leybold Optics GmbH; Siemensstraße 88 63755 Alzenau Germany

Funder

European Community's Seventh Framework Program

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/jsid.212/fullpdf

Reference19 articles.

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3. Review of recent developments in amorphous oxide semiconductor thin film transistor devices;Park;Thin Solid Films,2012

4. Toward high-performance amorphous GIZO TFTs;Barquinha;J. Electrochem. Soc.,2009

5. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering;Yabuta;Appl. Phys. Lett.,2006

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