P‐20: High Quality Self‐Aligned Coplanar Thin‐Film Transistors with SOG Materials for High Transparent AMOLED Display
Author:
Affiliation:
1. BOE Technology Group Co. Ltd No. 9 Dize Rd, BDA Beijing 100176 China
Publisher
Wiley
Subject
General Medicine
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.15695
Reference12 articles.
1. High performance a-IGZO thin-film transistors with mf-PVD SiO2 as an etch-stop-layer
2. P-2: Self-Aligned Indium Gallium Zinc Oxide Thin-Film Transistor with Source/Drain Regions Treated by NH3Plasma
3. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
4. Transparent Flexible Circuits Based on Amorphous-Indium–Gallium–Zinc–Oxide Thin-Film Transistors
5. 69.2: distinguished paper : high reliable a-IGZO TFTs with self-aligned coplanar structure for large-sized ultrahighdefinition OLED TV;C Ha;SID Symp Dig Tech Pap,2015
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