P-2: Self-Aligned Indium Gallium Zinc Oxide Thin-Film Transistor with Source/Drain Regions Treated by NH3Plasma
Author:
Affiliation:
1. BOE Technology Group Co. Ltd; No. 9 Dize Rd, BDA Beijing 100176 China
Publisher
Wiley
Reference15 articles.
1. Novel back-channel-etch process flow based a-IGZO TFTs for circuit and display applications on PEN foil
2. High performance a-IGZO thin-film transistors with mf-PVD SiO2 as an etch-stop-layer
3. 51.2: The Development of a High Mobility Zinc Oxynitride TFT for AMOLED
4. P-21: Effects of Low Hydrogen Dielectric Film on a-IGZO TFT Properties
5. Zinc-Oxide Thin-Film Transistor With Self-Aligned Source/Drain Regions Doped With Implanted Boron for Enhanced Thermal Stability
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1. Improved reliability of a-IGZO thin-film transistor under positive gate bias stress by utilizing NH3 plasma treatment;Microelectronics Reliability;2023-12
2. A Monolithically Integrated Low-Dropout Regulator Based on a-InGaZnO TFTs With Ultralow Power Consumption;IEEE Electron Device Letters;2023-10
3. P‐20: High Quality Self‐Aligned Coplanar Thin‐Film Transistors with SOG Materials for High Transparent AMOLED Display;SID Symposium Digest of Technical Papers;2022-06
4. Impact of NH3 plasma treatment for solution-processed indium oxide thin-film transistors with low thermal budget;Journal of Alloys and Compounds;2020-03
5. P‐1.15: A new optical compensation scheme for AMOLED displays with a‐IGZO TFT and a‐Si:H PIN diode;SID Symposium Digest of Technical Papers;2019-09
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