High quality InxGa1-xN thin films with x > 0.2 grown on silicon-Reference-Cited by-同舟云学术

High quality InxGa1-xN thin films with x > 0.2 grown on silicon

Published:2010-06-23 Issue:7 Volume:247 Page:1747-1749
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:phys. stat. sol. (b)

Author:

Gherasoiu I.,Yu K. M.,Reichertz L. A.,Kao V. M.,Hawkridge M.,Ager J. W.,Walukiewicz W.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Modeling of InGaN/Si tandem solar cells

2. Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system

3. J. W. Ager , III L. A. Reichertz D. Yamaguchi L. Hsu R. E. Jones K. M. Yu W. Walukiewicz W. J. Schaff in: Proceedings of 22nd European Photovoltaic Solar Energy Conference and Exhibition 2007

4. The effects of AlN buffer on the properties of InN epitaxial films grown on Si(111) by plasma-assisted molecular-beam epitaxy

5. Single phase InxGa1−xN (0.25≤x≤0.63) alloys synthesized by metal organic chemical vapor deposition

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