Investigation of the Structural and Optical Properties of Compositionally V‐Graded Strained In x Ga 1

Investigation of the Structural and Optical Properties of Compositionally V‐Graded Strained In x Ga 1– x N Layers

Published:2020-04 Issue:4 Volume:257 Page:1900591
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Ghosh Pijush K.¹^ORCID,Stanchu Hryhorii V.²,Maidaniuk Yurii²,Sarollahi Mirsaeid¹,Aldawsari Manal³,Kuchuk Andrian V.²,Mazur Yuriy I.²,Salamo Gregory J.²,Ware Morgan E.¹

Affiliation:

1. Electrical Engineering DepartmentUniversity of Arkansas 4183 Bell Engineering Center Fayetteville AR 72701 USA

2. Institute for Nanoscience and EngineeringUniversity of Arkansas 731 W Dickson St Fayetteville AR 72701 USA

3. Microelectronics-Photonics ProgramUniversity of Arkansas 731 W Dickson St Fayetteville AR 72701 USA

Funder

Defense Advanced Research Projects Agency

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201900591

Reference16 articles.

1. Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices

2. P-Channel InGaN-HFET Structure Based on Polarization Doping

3. Polarization induced three-dimensional hole gas in compositionally graded InxGa1−xN layer

4. Polarization-engineering in group III-nitride heterostructures: New opportunities for device design

5. Indium incorporation during the growth of InGaN by molecular-beam epitaxy studied by reflection high-energy electron diffraction intensity oscillations

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