Polarization induced three-dimensional hole gas in compositionally graded InxGa1−xN layer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/9/i=7/a=075502/pdf
Reference21 articles.
1. Planar Nearly Ideal Edge-Termination Technique for GaN Devices
2. Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction
3. Vertical Power p-n Diodes Based on Bulk GaN
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3. Modulation bandwidth improvement of GaN-based green micro-LEDs array by polarization-induced p-type doping;Applied Physics Letters;2022-07-18
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