Alloy segregation at stacking faults in zincblende GaN heterostructures-Reference-Cited by-同舟云学术

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Alloy segregation at stacking faults in zincblende GaN heterostructures

Published:2020-10-14 Issue:14 Volume:128 Page:145703
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ding B.¹^ORCID,Frentrup M.¹,Fairclough S. M.¹^ORCID,Kappers M. J.¹,Jain M.²,Kovács A.³^ORCID,Wallis D. J.¹²⁴,Oliver R. A.¹^ORCID

Affiliation:

1. Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom

2. Kubos Semiconductors Ltd, Future Business Centre, Kings Hedges Road, Cambridge CB4 2HY, United Kingdom

3. Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Forschungszentrum Jülich, Jülich 52425, Germany

4. Centre for High Frequency Engineering, University of Cardiff, Queen's Building, Cardiff CF24 3AA, United Kingdom

Funder

Engineering and Physical Sciences Research Council

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0015157

Reference39 articles.

1. Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting

2. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes

3. High‐efficiency InGaAlP/GaAs visible light‐emitting diodes

4. High‐brightness InGaAlP green light‐emitting diodes

5. Efficiency Drop in GreenInGaN/GaNLight Emitting Diodes: The Role of Random Alloy Fluctuations

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Cathodoluminescence studies of the optical properties of a zincblende InGaN/GaN single quantum well;Nanotechnology;2024-07-11

2. Atom Probe Tomography Investigation of the Impact of Stacking Faults on InGaN/GaN Quantum Well LED Systems;Microscopy and Microanalysis;2024-07

3. Efficiency droop in zincblende InGaN/GaN quantum wells;Nanoscale;2024

4. Growth modes and chemical-phase separation in GaP1−xNx layers grown by chemical beam epitaxy on GaP/Si(001);Journal of Applied Physics;2023-11-02

5. Design tradeoffs between traditional hexagonal and emerging cubic In_XGa_(1–X)N/GaN-based green light-emitting diodes;Journal of the Optical Society of America B;2023-04-12

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