Evolution of stratification in high-alloy content InGaN epilayers grown on (0001) AlN
Author:
Affiliation:
1. Physics Department, Aristotle University of Thessaloniki, Thessaloniki, Greece
2. Physics Department, University of Crete, Heraklion Crete, Greece
3. Microelectronics Research Group (MRG), IESL, FORTH, Heraklion Crete, Greece
Funder
Polish National Science Centre
European Union (European Social Fund–ESF) and Greek national funds
Publisher
Informa UK Limited
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.tandfonline.com/doi/pdf/10.1080/02670836.2018.1506727
Reference38 articles.
1. Design and characterization of GaN∕InGaN solar cells
2. MOVPE growth of thick (∼1 µm) InGaN on AlN/Si substrates for InGaN/Si tandem solar cells
3. Polarization-Engineered InGaN/GaN Solar Cells: Realistic Expectations for Single Heterojunctions
4. Solid phase immiscibility in GaInN
5. Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy
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