Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga 2 O 3-Reference-Cited by-同舟云学术

Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga 2 O 3

Published:2020-06-08 Issue:8 Volume:14 Page:2000145
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Feng Zixuan¹,Bhuiyan A F M Anhar Uddin¹,Xia Zhanbo¹,Moore Wyatt¹,Chen Zhaoying¹,McGlone Joe F.¹,Daughton David R.²,Arehart Aaron R.¹,Ringel Steven A.¹³,Rajan Siddharth¹³,Zhao Hongping¹³^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering The Ohio State University Columbus OH 43210 USA

2. Lake Shore Cryotronics Westerville OH 43082 USA

3. Department of Materials Science and Engineering The Ohio State University Columbus OH 43210 USA

Funder

Air Force Office of Scientific Research

National Science Foundation

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202000145

Reference34 articles.

1. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

2. Polymorphism of Ga2O3 and the System Ga2O3—H2O

3. Halide vapor phase epitaxy of Si doped β-Ga2O3 and its electrical properties

4. MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties

5. Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy

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