HfO 2 ‐Based Ferroelectrics Applications in Nanoelectronics-Reference-Cited by-同舟云学术

HfO 2 ‐Based Ferroelectrics Applications in Nanoelectronics

Published:2021-02-11 Issue:5 Volume:15 Page:2000521
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Dragoman Mircea¹^ORCID,Aldrigo Martino¹,Dragoman Daniela²³,Iordanescu Sergiu¹,Dinescu Adrian¹,Modreanu Mircea⁴

Affiliation:

1. National Institute for Research and Development in Microtechnologies (IMT Bucharest) Erou Iancu Nicolae Street 126A 077190 Voluntari (Ilfov) Romania

2. Physics Faculty University of Bucharest P.O. Box MG-11 077125 Bucharest Romania

3. Academy of Romanian Scientists Ilfov 3 050044 Bucharest Romania

4. Tyndall National Institute University College Cork Lee Maltings, Dyke Parade Cork Ireland

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202000521

Reference57 articles.

1. Permittivity increase of yttrium-doped HfO2 through structural phase transformation

2. Dielectric constant enhancement due to Si incorporation into HfO2

3. Physical and Electrical Properties of Hafnium–Zirconium–Oxide Films Grown by Atomic Layer Deposition

4. Increasing permittivity in HfZrO thin films by surface manipulation

5. Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

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1. Observing ferroelastic switching in Hf_0.5Zr_0.5O₂ thin film;Chinese Physics B;2024-06-01

2. Linking the Intrinsic Electrical Response of Ferroelectric Devices to Material Properties by Means of Impedance Spectroscopy;IEEE Transactions on Device and Materials Reliability;2023-09

3. Nanoelectromechanical resonators for gigahertz frequency control based on hafnia–zirconia–alumina superlattices;Nature Electronics;2023-07-27

4. High-Frequency Investigation of Polarization Effects in Nanoscale Hafnium-Based Ferroelectrics;2023 IEEE 23rd International Conference on Nanotechnology (NANO);2023-07-02

5. Transient Negative Capacitance Induced by Charged Oxygen Vacancy Drift in HfO₂‐Based Films;physica status solidi (RRL) – Rapid Research Letters;2023-06-15