Investigation of In Situ Boron-Doping in SiGe Source/Drain Layer Growth for PMOS Devices
Author:
Affiliation:
1. State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
2. Shanghai IC R&D Center Co. Ltd., Shanghai 201210, China
Abstract
Funder
Shanghai Postdoctoral Scientific Program
Publisher
Hindawi Limited
Subject
General Materials Science
Link
http://downloads.hindawi.com/journals/jnm/2015/537696.pdf
Reference9 articles.
1. Selective Growth of B- and C-Doped SiGe Layers in Unprocessed and Recessed Si Openings for p-type Metal-Oxide-Semiconductor Field-Effect Transistors Application
2. A high performance pMOSFET with two-step recessed SiGe-S/D structure for 32nm node and beyond
3. Low-Stress Highly-Conductive In-Situ Boron Doped Ge0.7Si0.3Films by LPCVD
4. Selective Epitaxial Growth of Heavily Boron-Doped Silicon with Uniform Doping Depth Profile
5. High Quality SiGe:B of High Ge Layer for 14nm and Beyond FINFET Processes
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Epitaxial SiGe seed layer thickness for PFET performance tuning;2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC);2020-08
2. Effects of high in-situ source/drain boron doping in p-FinFETs on physical and device performance characteristics;Materials Science in Semiconductor Processing;2018-08
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