High Quality SiGe:B of High Ge Layer for 14nm and Beyond FINFET Processes

Abstract

The selective Epi of high quality with the high Ge of >50% has been demonstrated. The high quality Epi morphology can be obtained by modulating the Epi temperature to < 600C. The diamond shape Epi film with dislocation free can be observed by TEM. The flat Epi surface and the full strain Epi film can be analyzed by XRD. The Boron out-diffusion behavior in SiGe of high Ge study shows the tail abruptness was from 3nm/decade to 4nm/decade after S/D imp and anneal. The Boron out-diffusion can be well controlled by the high Ge and high quality SiGe Epi.