TaC x Thin Films Prepared by Atomic Layer Deposition as Diffusion Barriers for Cu Metallization
Author:
Affiliation:
1. Busan Center; Korea Basic Science Institute; 1275 Jisadong, Gangseogu Busan 618-230 Korea
2. School of Materials Science and Engineering; Yeungnam University; Gyeongsangbuk-do 712-749 Korea
3. Global Foundries; Albany New York 12203
Funder
KBSI
Technology Innovation Program
Industrial Strategic Technology Development Program
Ministry of Knowledge Economy
Publisher
Wiley
Subject
Materials Chemistry,Ceramics and Composites
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1111/jace.12695/fullpdf
Reference37 articles.
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2. Comparative Study of Tantalum and Tantalum Nitrides (Ta2N and TaN) as a Diffusion Barrier for Cu Metallization;Min;J. Vac. Sci. Tech., B,1996
3. Diffusion Barrier Properties of TaC Between Si and Cu;Imahori;Thin Solid Films,1997
4. TaC as a Diffusion Barrier Between Si and Cu;Laurila;J. Appl. Phys.,2002
5. Tantalum Carbonitride Electrodes and the Impact of Interface Chemistry on Device Characteristics;Schaeffer;J. Appl. Phys.,2007
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