Comparative study of tantalum and tantalum nitrides (Ta2N and TaN) as a diffusion barrier for Cu metallization-Reference-Cited by-同舟云学术

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Comparative study of tantalum and tantalum nitrides (Ta2N and TaN) as a diffusion barrier for Cu metallization

Published:1996-09 Issue:5 Volume:14 Page:3263
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Min Kyung-Hoon

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 253 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrolytic Micro‐Capacitors Based on Tantalum Films for High Voltage Applications;Advanced Materials Technologies;2024-07-27

2. In situ formation of inhibitor species through catalytic surface reactions during area-selective atomic layer deposition of TaN;The Journal of Chemical Physics;2024-05-22

3. Influence of room-temperature oxidation on stability and performance of reactively sputtered TaN thin films for high-precision sheet resistors;Surfaces and Interfaces;2024-03

4. Silatrane-Based Molecular Nanolayers as Efficient Diffusion Barriers for Cu/SiO₂/Si Heterojunctions: Implications for Integrated Circuit Manufacturing;ACS Applied Nano Materials;2024-02-19

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