Silatrane-Based Molecular Nanolayers as Efficient Diffusion Barriers for Cu/SiO<sub>2</sub>/Si Heterojunctions: Implications for Integrated Circuit Manufacturing-Reference-Cited by-同舟云学术

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Silatrane-Based Molecular Nanolayers as Efficient Diffusion Barriers for Cu/SiO₂/Si Heterojunctions: Implications for Integrated Circuit Manufacturing

Published:2024-02-19 Issue:5 Volume:7 Page:4874-4885
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Chen Ting-An¹,Yu Ting¹,Vu Van Truc²,Huang Chun-Jen²³^ORCID,Chen Chih-Ming¹^ORCID

Affiliation:

1. Department of Chemical Engineering, National Chung Hsing University, 145 Xingda Road, South District, Taichung City 402, Taiwan

2. Department of Chemical and Materials Engineering, National Central University, 300 Zhongda Road, Zhongli District, Taoyuan City 320317, Taiwan

3. R&D Center for Membrane Technology, Chung Yuan Christian University, 200 Chung Pei Road, Chung-Li City 32023, Taiwan

Funder

National Science and Technology Council

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.3c05604

Reference41 articles.

1. Damascene copper electroplating for chip interconnections

2. The future of interconnection technology

3. Diffusion and Solubility of Copper in Extrinsic and Intrinsic Germanium, Silicon, and Gallium Arsenide

4. Physics of Copper in Silicon

5. Intrinsic Diffusion Coefficient of Interstitial Copper in Silicon

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