A High-Temperature-Capacitor Dielectric Based on K0.5Na0.5NbO3-Modified Bi1/2Na1/2TiO3-Bi1/2K1/2TiO3-Reference-Cited by-同舟云学术

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A High-Temperature-Capacitor Dielectric Based on K0.5Na0.5NbO3-Modified Bi1/2Na1/2TiO3-Bi1/2K1/2TiO3

Published:2012-07-03 Issue:11 Volume:95 Page:3519-3524
ISSN:0002-7820
Container-title:Journal of the American Ceramic Society
language:en
Short-container-title:J. Am. Ceram. Soc.

Author:

Dittmer Robert¹,Anton Eva-Maria¹,Jo Wook¹,Simons Hugh²,Daniels John E.²,Hoffman Mark²,Pokorny Jan,Reaney Ian M.³,Rödel Jürgen¹

Affiliation:

1. Institute of Materials Science; Technische Universität Darmstadt; Darmstadt; 64287; Hesse; Germany

2. School of Materials Science & Engineering; The University of New South Wales; Sydney; 2052; NSW; Australia

3. Department of Materials Science and Engineering; The University of Sheffield; Sheffield; S10 2TN; UK

Publisher

Wiley

Subject

Materials Chemistry,Ceramics and Composites

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1111/j.1551-2916.2012.05321.x/fullpdf

Reference45 articles.

1. Frontiers of Silicon-on-Insulator;Celler;J. Appl. Phys.,2003

2. SOI-based integrated circuits for high-temperature power electronics applications

3. Packaging Technology for Electronic Applications in Harsh High-Temperature Environments;Hagler;IEEE Trans. Ind. Electron.,2011

4. State of the Art of High Temperature Power Electronics;Buttay;Mater. Sci. Eng. B-Adv. Funct. Solid-State Mater.,2011

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