SOI-based integrated circuits for high-temperature power electronics applications-Reference-Cited by-同舟云学术

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SOI-based integrated circuits for high-temperature power electronics applications

Published:2011-03 Issue: Volume: Page:
ISSN:
Container-title:2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)
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Author:

Greenwell R. L.,McCue B. M.,Zuo L.,Huque M. A.,Tolbert L. M.,Blalock B. J.,Islam S. K.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5740654/5744557/05744692.pdf?arnumber=5744692

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. High‐speed gate driver circuit of SiC‐MOSFET for high temperature application;IET Power Electronics;2020-12

4. A Temperature Compensated 5 GHz GaN on SiC Power Amplifier;2020 IEEE 63rd International Midwest Symposium on Circuits and Systems (MWSCAS);2020-08

5. RF Small- and Large-Signal Characteristics of CPW and TFMS Lines on Trap-Rich HR-SOI Substrates;IEEE Transactions on Electron Devices;2018-08

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