Numerical investigation on the device performance of electron blocking layer free AlInN nanowire deep ultraviolet light-emitting diodes
Author:
Funder
National Science Foundation
Directorate for Engineering
Publisher
The Optical Society
Subject
Electronic, Optical and Magnetic Materials
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1. AlGaN-Based Deep-Ultraviolet Laser Diodes with Novel Superlattice Electron-Blocking Layers;Journal of Russian Laser Research;2022-11
2. The Effect of p-Doped AlInN Last Quantum Barrier on Carrier Concentration of 266 nm Light-Emitting Diodes Without Electron Blocking Layer;Journal of Electronic Materials;2022-08-26
3. Polarization-Engineered p-Type Electron-Blocking-Layer-Free III-Nitride Deep-Ultraviolet Light-Emitting Diodes for Enhanced Carrier Transport;Journal of Electronic Materials;2022-01-03
4. Influence of growth parameters on microstructures and electrical properties of InxAl1−xN thin films using sputtering;Journal of Alloys and Compounds;2021-12
5. Compositionally graded AlGaN hole source layer for deep-ultraviolet nanowire light-emitting diode without electron blocking layer;Nanotechnology;2021-11-24
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