Abstract
Abstract
The electron blocking layer (EBL) plays a vital role in blocking the electron overflow from an active region in the AlGaN-based deep-ultraviolet light-emitting diode (DUV-LED). Besides the blocking of electron overflow, EBL reduces hole injection toward the active region. In this work, we proposed a DUV nanowire (NW) LED structure without EBL by replacing it with a compositionally continuous graded hole source layer (HSL). Our proposed graded HSL without EBL provides a better electron blocking effect and enhanced hole injection efficiency. As a result, optical power is improved by 48% and series resistance is reduced by 50% with 4.8 V threshold voltage. Moreover, graded HSL without EBL offer reduced electric field within the active region, which leads to a significant increment in radiative recombination rate and enhancement of spontaneous emission by 34% at 254 nm wavelength, as a result, 52% maximum internal quantum efficiency with 24% efficiency drop is reported.
Funder
National Natural Science Foundation of China
Innovation Project
Key Innovation Project
NKRDP
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering
Cited by
10 articles.
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