Planar GeSn lateral p-i-n resonant-cavity-enhanced photodetectors for short-wave infrared integrated photonics
Author:
Funder
Ministry of Science and Technology, Taiwan
Air Force Office of Scientific Research
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference33 articles.
1. Silicon-based silicon–germanium–tin heterostructure photonics
2. GeSn-based p-i-n photodiodes with strained active layer on a Si wafer
3. Alloy Stability of Ge1−xSnx with Sn Concentrations up to 17% Utilizing Low-Temperature Molecular Beam Epitaxy
4. Mid-infrared (3–8 μm) Ge1−ySny alloys (0.15 < y < 0.30): Synthesis, structural, and optical properties
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4. Design and Optimization of GeSn Waveguide Photodetectors for 2-µm Band Silicon Photonics;Sensors;2022-05-24
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