Phosphorus implantation into in situ doped Ge-on-Si for high light-emitting efficiency-Reference-Cited by-同舟云学术

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Phosphorus implantation into in situ doped Ge-on-Si for high light-emitting efficiency

Published:2016-08-22 Issue:9 Volume:6 Page:2939
ISSN:2159-3930
Container-title:Optical Materials Express
language:en
Short-container-title:Opt. Mater. Express

Author:

Baek Jiwoong,Ki Bugeun,Kim Daeik,Lee Chulwon,Nam Donguk,Cho Yong-Hoon,Oh Jungwoo

Funder

Ministry of Science, ICT and Future Planning (MSIP)

Ministry of Trade, Industry and Energy (MOTIE)

Publisher

The Optical Society

Subject

Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Effect of Scaling of Interconnections on the Time Delay of VLSI Circuits

2. Rationale and challenges for optical interconnects to electronic chips

3. Optical interconnection networks for high-performance computing systems

4. High performance, waveguide integrated Ge photodetectors

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low temperature metal induced crystallization of orientation-preferred polycrystalline germanium with n- and p-type doping for device applications;Journal of Alloys and Compounds;2024-06

2. High-speed photodetectors;Integrated Photonics for Data Communication Applications;2023

3. Suppression of Phosphorous Out-Diffusion in PH₃ Plasma Immersion Ion-Implanted Germanium Epilayer Grown on Silicon (100) Substrate through SiO_x Capping Layer;MATERIALS TRANSACTIONS;2020-01-01

4. Interplay of strain and intermixing effects on direct-bandgap optical transition in strained Ge-on-Si under thermal annealing;Scientific Reports;2019-08-12

5. High concentration phosphorus doping in Ge for CMOS-integrated laser applications;Solid-State Electronics;2019-04

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