Interplay of strain and intermixing effects on direct-bandgap optical transition in strained Ge-on-Si under thermal annealing-Reference-Cited by-同舟云学术

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Interplay of strain and intermixing effects on direct-bandgap optical transition in strained Ge-on-Si under thermal annealing

Published:2019-08-12 Issue:1 Volume:9 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Lee Chulwon,Yoo Yang-Seok,Ki Bugeun,Jang Min-Ho,Lim Seung-Hyuk,Song Hyun Gyu,Cho Jong-Hoi,Oh Jungwoo,Cho Yong-Hoon

Funder

Ministry of Trade, Industry and Energy

National Research Foundation of Korea

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/s41598-019-48032-4.pdf

Reference39 articles.

1. Boztug, C., Sánchez-Pérez, J. R., Cavallo, F., Lagally, M. G. & Paiella, R. Strained-germanium nanostructures for infrared photonics. ACS Nano 8, 3136–3151 (2014).

2. Cheng, T.-H. et al. Strain-enhanced photoluminescence from Ge direct transition. Appl. Phys. Lett. 96, 211108 (2010).

3. Grzybowski, G. et al. Direct versus indirect optical recombination in Ge films grown on Si substrates. Phys. Rev. B 84, 205307 (2011).

4. Liu, J., Sun, X., Camacho-Aguilera, R., Kimerling, L. C. & Michel, J. Ge-on-Si laser operating at room temperature. Opt. Lett. 35, 679–681 (2010).

5. Liu, J., Sun, X., Kimerling, L. C. & Michel, J. Direct-gap optical gain of Ge on Si at room temperature. Opt. Lett. 34, 1738–1740 (2009).

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1. Thermodynamic property derivatives of the electronic and static dielectric constants: A simple Grüneisen parameter approach;Journal of Applied Physics;2024-08-22

2. Evolution of GeSi islands in epitaxial Ge-on-Si during annealing;Applied Surface Science;2024-06

3. Non-thermal regimes of laser annealing of semiconductor nanostructures: crystallization without melting;Frontiers in Nanotechnology;2023-10-19

4. GaN MSM structure UV photodetector detector based on nonplanar Si substrate and its performance optimization;Semiconductor Science and Technology;2022-09-16

5. Impact of High-Temperature Annealing on Interfacial Layers Grown by O₂ Plasma on Si0.₅Ge_0.5 Substrates;IEEE Transactions on Electron Devices;2022-03

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