Strain-enhanced photoluminescence from Ge direct transition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3429085
Reference18 articles.
1. Efficient silicon light-emitting diodes
2. Room-temperature electroluminescence from electron-hole plasmas in the metal–oxide–silicon tunneling diodes
3. Room‐temperature electroluminescence from Si/Ge/Si1−xGex quantum‐well diodes grown by molecular‐beam epitaxy
4. Well-resolved band-edge photoluminescence of excitons confined in strainedSi1−xGexquantum wells
5. Enhanced photoluminescence of strained Ge with a δ-doping SiGe layer on silicon and silicon-on-insulator
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