Suppression of electron leakage by inserting a thin undoped InGaN layer prior to electron blocking layer in InGaN-based blue-violet laser diodes
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference12 articles.
1. High-power GaN-based blue-violet laser diodes with AlGaN∕GaN multiquantum barriers
2. Origin of InGaN light-emitting diode efficiency improvements using chirped AlGaN multi-quantum barriers
3. An improved multi-layer stopper in a GaN-based laser diode
4. Numerical simulation of 405-nm InGaN laser diodes with polarization-matched AlGaInN electron-blocking layer and barrier layer
5. Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers
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1. A next-generation light-emitting device: ZOGAN LED with a heterogeneous p-layer composed of oxide and nitride semiconductors;AIP Advances;2024-04-01
2. Effects of AlInGaN electron barrier layer with different aluminum components on the photoelectric properties of GaN-based laser;Fifth International Conference on Optoelectronic Science and Materials (ICOSM 2023);2024-02-01
3. InGaN基蓝光激光器p型波导层和有源区优化研究;Laser & Optoelectronics Progress;2023
4. Influence of asymmetric well/barrier layers on the performance of InGaN quantum well lasers;Second International Conference on Optics and Image Processing (ICOIP 2022);2022-09-10
5. Enhancing performance of GaN-based LDs by using GaN/InGaN asymmetric lower waveguide layers;Chinese Physics B;2022-06-01
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