Enhancing performance of GaN-based LDs by using GaN/InGaN asymmetric lower waveguide layers

Abstract

The effects of GaN/InGaN asymmetric lower waveguide (LWG) layers on photoelectrical properties of InGaN multiple quantum well laser diodes (LDs) with an emission wavelength of around 416 nm are theoretically investigated by tuning the thickness and the indium content of InGaN insertion layer (InGaN-IL) between the GaN lower waveguide layer and the quantum wells, which is achieved with the Crosslight Device Simulation Software (PIC3D, Crosslight Software Inc.). The optimal thickness and the indium content of the InGaN-IL in lower waveguide layers are found to be 300 nm and 4%, respectively. The thickness of InGaN-IL predominantly affects the output power and the optical field distribution in comparison with the indium content, and the highest output power is achieved to be 1.25 times that of the reference structure (symmetric GaN waveguide), which is attributed to the reduced optical absorption loss as well as the concentrated optical field nearby quantum wells. Furthermore, when the thickness and indium content of InGaN-IL both reach a higher level, the performance of asymmetric quantum wells LDs will be weakened rapidly due to the obvious decrease of optical confinement factor (OCF) related to the concentrated optical field in the lower waveguide.