A next-generation light-emitting device: ZOGAN LED with a heterogeneous p-layer composed of oxide and nitride semiconductors-Reference-Cited by-同舟云学术

A next-generation light-emitting device: ZOGAN LED with a heterogeneous p-layer composed of oxide and nitride semiconductors

Published:2024-04-01 Issue:4 Volume:14 Page:
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:

Author:

Ryu Yung Ryel¹²^ORCID,Hong Sung Ki¹,Schubert E. Fred³^ORCID,Jeon Dong-Min⁴^ORCID,Shin Dong-Soo⁴^ORCID,Shim Jong-In⁴^ORCID,Kim Sang-Mook²,Baek Jong Hyeob²^ORCID

Affiliation:

1. ZOGAN Semi 1 , Pyeongtaek, Gyeonggi-do 17757, Republic of Korea

2. Korea Photonics Technology Institute 2 , Gwangju 6100, Republic of Korea

3. Future Chips Constellation, Department of Electrical, Computer, and System Engineering, Rensselaer Polytechnic Institute 3 , Troy, New York 12180, USA

4. Department of Photonics and Nanoelectronics and BK21 FOUR ERICA-ACE, Hanyang University ERICA 4 , Ansan, Gyeonggi-do 15588, Republic of Korea

Abstract

We have developed a light-emitting device, called the ZOGAN light-emitting diode (LED). The ZOGAN LED is formed with the p-layer composed of both ZnO-based oxide and GaN-based nitride semiconductors. The ZOGAN LED shows the characteristics of light-emitting devices required for ultra-high-resolution displays.

Funder

The Korea Minister of Trade, Industry, and Energy

the Korea Minister of Trade, Industry, and Energy

Publisher

AIP Publishing

Link

https://pubs.aip.org/aip/adv/article-pdf/doi/10.1063/5.0192350/19871030/045215_1_5.0192350.pdf

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