Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers-Reference-Cited by-同舟云学术

Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers

Published:2012-10-15 Issue:16 Volume:101 Page:161110
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Choi Suk,Ji Mi-Hee,Kim Jeomoh,Jin Kim Hee,Satter Md. M.,Yoder P. D.,Ryou Jae-Hyun,Dupuis Russell D.,Fischer Alec M.,Ponce Fernando A.

Funder

U.S. Department of Energy

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4759044

Reference29 articles.

1. Focus Issue: Optics in LEDs for Lighting

2. Auger recombination in InGaN measured by photoluminescence

3. On the importance of radiative and Auger losses in GaN-based quantum wells

4. Analysis of processes limiting quantum efficiency of AlGaInN LEDs at high pumping

5. Origin of efficiency droop in GaN-based light-emitting diodes

Cited by 67 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Configuration analysis of the quantum well epi-layer in the InGaAs-based near-infrared light-emitting diodes;The European Physical Journal Plus;2024-02-11

2. Study on Modulation Bandwidth of GaN-Based Micro-Light-Emitting Diodes by Adjusting Quantum Well Structure;Nanomaterials;2022-10-28

3. Study on modulation bandwidth of GaN-based micro-light-emitting diodes by adjusting quantum well structure;2022-08-03

4. Ga-free AlInN films growth by close-coupled showerhead metalorganic chemical vapor deposition;Micro and Nanostructures;2022-05

5. Reduction in efficiency droop/decline of green GaN-based light-emitting diodes by employing heterostructure cap layer;Materials Science and Engineering: B;2020-08