Origin of InGaN light-emitting diode efficiency improvements using chirped AlGaN multi-quantum barriers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4776739
Reference19 articles.
1. Efficiency droop in nitride-based light-emitting diodes
2. Auger recombination in InGaN measured by photoluminescence
3. Origin of efficiency droop in GaN-based light-emitting diodes
4. High-power GaN-based blue-violet laser diodes with AlGaN∕GaN multiquantum barriers
5. Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer
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