Influence of the microstructure geometry of patterned sapphire substrates on the light extraction efficiency of GaN LEDs
Author:
Funder
Ministry of Science and Technology, Taiwan (MOST)
Publisher
The Optical Society
Reference24 articles.
1. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
2. Improvement on Optical Properties of GaN Light-Emitting Diode With Mesh-Textured Sapphire Back Delineated by Laser Scriber
3. Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures
4. Vertical light-emitting diodes with surface gratings and rough surfaces for effective light extraction
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2. Enhanced Performance of InGaN Light-Emitting Diodes via High-Quality GaN and Embedded Air Voids Grown on Hexagonal 3D Serpentine Mask Sapphire Substrates;ACS Photonics;2023-09-11
3. Study of a GaN/InGaN-based Light Emitting Diode with an Indium Gallium Oxide Current Blocking Layer, Silver Nanoparticles, and a Gallium Oxide Surface Passivation Layer;ECS Journal of Solid State Science and Technology;2023-09-01
4. Effect of texture on 4H–SiC substrate surface on film growth: A molecular dynamics study;Vacuum;2023-08
5. Anisotropic Analysis of Etch Rates for Sapphire Based on a Layer-by-Layer Removal Model of Surface Atoms;Processes;2023-04-21
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