Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference21 articles.
1. Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes
2. Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes
3. Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500–540 nm
4. Self-consistent gain analysis of type-II ‘W’ InGaN–GaNAs quantum well lasers
5. Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes
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