Study of a GaN/InGaN-based Light Emitting Diode with an Indium Gallium Oxide Current Blocking Layer, Silver Nanoparticles, and a Gallium Oxide Surface Passivation Layer

Abstract

An interesting GaN/InGaN-based light emitting diode (LED) structure incorporating silver (Ag) nanoparticles (NPs), an indium gallium oxide (IGO) current blocking layer (CBL), and a gallium oxide (Ga2O3) surface passivation layer (SPL), is manufactured and proposed. Based on the designed structure, the light extraction characteristics and the current distributing properties can be substantially enhanced, and the surface leakage current is remarkably reduced. In this work, under the injected current of 400 mA, the studied Device D with Ag NPs, a 30 nm-thick IGO CBL, and a 50 nm-thick Ga2O3 SPL shows the improvement of 20.4% in light output power (LOP) compared to a traditional LED device. Additionally, the studied Device D shows enhanced performance on far-field radiation. Hence, the proposed structure provides a reliable solution to manufacture high-efficiency GaN/InGaN-based LEDs.