GaN-Based Blue Light-Emitting Diodes with an Electron Transmission Layer-Reference-Cited by-同舟云学术

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GaN-Based Blue Light-Emitting Diodes with an Electron Transmission Layer

Published:2017 Issue:10 Volume:6 Page:R154-R157
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Jheng J. S.,Wang C. K.,Chiou Y. Z.,Chang S. P.^ORCID,Chang S. J.

Funder

National Science Council Taiwan (NSC)

Ministry of Science and Technology, Taiwan (MOST)

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference31 articles.

1. Defect related issues in the “current roll-off” in InGaN based light emitting diodes

2. Efficiency droop behaviors of InGaN∕GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness

3. Investigation of the Nonthermal Mechanism of Efficiency Rolloff in InGaN Light-Emitting Diodes

4. Temperature-dependence of the internal efficiency droop in GaN-based diodes

5. Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of a GaN/InGaN-based Light Emitting Diode with an Indium Gallium Oxide Current Blocking Layer, Silver Nanoparticles, and a Gallium Oxide Surface Passivation Layer;ECS Journal of Solid State Science and Technology;2023-09-01

2. Study of GaN/InGaN Light-Emitting Diodes with Specific Zirconium Oxide (ZrO₂) Layers;ECS Journal of Solid State Science and Technology;2022-07-01

3. Electrochemical Potentiostatic Activation for the Improvement of 270 nm AlGaN-Based UV-C Light-Emitting Diodes;ECS Journal of Solid State Science and Technology;2022-02-01

4. Application of Hexagonal Boron Nitride to a Heat-Transfer Medium of an InGaN/GaN Quantum-Well Green LED;ACS Applied Materials & Interfaces;2019-04-30

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