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Deep Electron and Hole Traps in Electron-Irradiated Green GaN/InGaN Light Emitting Diodes

  • Published:2017 Issue:10 Volume:6 Page:Q127-Q131
  • ISSN:2162-8769
  • Container-title:ECS Journal of Solid State Science and Technology
  • language:en
  • Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Lee In-Hwan,Polyakov A. Y.,Smirnov N. B.,Shchemerov I. V.,Chung Tae-Hoon,Lagov P. B.,Zinov'ev R. A.,Pearton S. J.

Funder

Ministry of Education and Science of the Russian Federation

National Research Foundation of Korea (NRF)

DOD | Defense Threat Reduction Agency (DTRA)

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of a GaN/InGaN-based Light Emitting Diode with an Indium Gallium Oxide Current Blocking Layer, Silver Nanoparticles, and a Gallium Oxide Surface Passivation Layer;ECS Journal of Solid State Science and Technology;2023-09-01

2. Degradation of InGaN LEDs by Proton Radiation;2023 8th International Conference on Business and Industrial Research (ICBIR);2023-05-18

3. Variable temperature thermal droop characteristics of 255 nm UV LED;Applied Physics Letters;2022-07-18

4. Study of GaN/InGaN Light-Emitting Diodes with Specific Zirconium Oxide (ZrO2) Layers;ECS Journal of Solid State Science and Technology;2022-07-01

5. Laser ion source for semiconductor applications;Journal of Physics: Conference Series;2022-04-01
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