Through-focus EUV multilayer defect compensation considering optical proximity correction
Author:
Affiliation:
1. Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences
2. University of Chinese Academy of Sciences
Abstract
Funder
National Major Science and Technology Projects of China
Publisher
Optica Publishing Group
Subject
Atomic and Molecular Physics, and Optics,Engineering (miscellaneous),Electrical and Electronic Engineering
Reference23 articles.
1. EUVL is being inserted in manufacturing in 2019: What are the mask related challenges remaining?
2. 0.33 NA EUV systems for High Volume Manufacturing
3. Actinic metrology platform for defect review and mask qualification: flexibility and performance
4. Overcoming EUV mask blank defects: what we can, and what we should
5. Through-focus EUV multilayer defect repair with nanomachining
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1. Method for optical proximity correction based on a vector imaging model;Applied Optics;2024-03-27
2. 极紫外光刻中的边缘放置误差控制;Chinese Journal of Lasers;2024
3. Multilayer defect compensation based on three dimensional absorber correction in EUV lithography;Fourteenth International Conference on Information Optics and Photonics (CIOP 2023);2023-11-24
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