Through-focus EUV multilayer defect compensation considering optical proximity correction

Author:

Cheng Wei12,Li Sikun12ORCID,Wang Xiangzhao12,Zhang Zinan12ORCID

Affiliation:

1. Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences

2. University of Chinese Academy of Sciences

Abstract

Extreme ultraviolet (EUV) multilayer defects result in the degradation of through-focus imaging quality. The optical proximity effect is another crucial factor that degrades the imaging quality. Both the impacts of the defects and the optical proximity effects could be mitigated by modifying the original mask patterns. A heuristic-based defect compensation method considering optical proximity correction and through-focus optimization is proposed in this paper. The edge of the mask pattern and the insertion of sub-resolution assist features (SRAFs) are optimized by covariance matrix adaptation evolution strategy (CMA-ES) to compensate for the degradation of the imaging quality with a certain defocus range. New encoding strategies for the edge pixels of the mask pattern and the SRAFs are proposed and utilized in this paper to ensure the manufacturability of the mask and the efficiency of the optimization at the same time. The rigorous database approach based on the scattering matrix is adopted to simulate the mask diffraction spectrum efficiently. Simulations verify that the through-focus imaging quality of both the defective masks with bump defects and pit defects could be obviously improved by the proposed defect compensation method.

Funder

National Major Science and Technology Projects of China

Publisher

Optica Publishing Group

Subject

Atomic and Molecular Physics, and Optics,Engineering (miscellaneous),Electrical and Electronic Engineering

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Method for optical proximity correction based on a vector imaging model;Applied Optics;2024-03-27

2. 极紫外光刻中的边缘放置误差控制;Chinese Journal of Lasers;2024

3. Multilayer defect compensation based on three dimensional absorber correction in EUV lithography;Fourteenth International Conference on Information Optics and Photonics (CIOP 2023);2023-11-24

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