Photoluminescence of InGaN-based red multiple quantum wells
Author:
Funder
National Key Research and Development Program of China
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference25 articles.
1. Thermodynamic analysis of the MOVPE growth of In Ga1−N
2. Control of Emission Wavelength of GaInN Single Quantum Well, Light Emitting Diodes Grown by Metalorganic Chemical Vapor Deposition in a Split-Flow Reactor
3. Metalorganic Vapor Phase Epitaxy of Thick InGaN on Sapphire Substrate
4. Critical thickness calculations for InGaN/GaN
5. High-color-rendering-index phosphor-free InGaN-based white light-emitting diodes by carrier injection enhancement via V-pits
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1. Temperature-dependent electroluminescence of red high-In-content MQWs of dual-wavelength micro-LED;Optics Express;2024-05-17
2. Correlative Micro‐Photoluminescence Study on Hybrid Quantum‐Well InGaN Red Light‐Emitting Diodes;physica status solidi (b);2024-04-25
3. Achieving InGaN-Based Red Light-Emitting Diodes by Increasing the Growth Pressure of Quantum Wells;IEEE Photonics Technology Letters;2023-12-15
4. Built-in electric field and hydrostatic pressure effects on exciton states in a wurtzite (In,Ga)N/GaN coupled double quantum well;Journal of the Korean Physical Society;2023-08-02
5. Structural and optical analyses for InGaN-based red micro-LED;Discover Nano;2023-05-25
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