High-color-rendering-index phosphor-free InGaN-based white light-emitting diodes by carrier injection enhancement via V-pits-Reference-Cited by-同舟云学术

High-color-rendering-index phosphor-free InGaN-based white light-emitting diodes by carrier injection enhancement via V-pits

Published:2020-10-26 Issue:17 Volume:117 Page:172103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Iida Daisuke¹^ORCID,Zhuang Zhe¹^ORCID,Kirilenko Pavel¹,Velazquez-Rizo Martin¹^ORCID,Ohkawa Kazuhiro¹^ORCID

Affiliation:

1. Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia

Funder

King Abdullah University of Science and Technology

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0026017

Reference39 articles.

1. Solid-State Light Sources Getting Smart

2. White light emitting diodes with super-high luminous efficacy

3. Whiteness Perception under LED Illumination

4. Extensive analysis of the degradation of phosphor-converted LEDs

5. Phosphor Free High-Luminous-Efficiency White Light-Emitting Diodes Composed of InGaN Multi-Quantum Well

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