Fast heuristic-based source mask optimization for EUV lithography using dual edge evolution and partial sampling
Author:
Funder
National Major Science and Technology Projects of China
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference22 articles.
1. EUVL: the natural evolution of optical microlithography
2. EUV source-mask optimization for 7nm node and beyond
3. Optimum mask and source patterns to print a given shape
4. Adaptive gradient-based source and mask co-optimization with process awareness
5. Robust pixel-based source and mask optimization for inverse lithography
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1. Multilayer defect compensation based on three dimensional absorber correction in EUV lithography;Fourteenth International Conference on Information Optics and Photonics (CIOP 2023);2023-11-24
2. Inverse Lithography Source Optimization via Particle Swarm Optimization and Genetic Combined Algorithm;IEEE Photonics Journal;2023-04
3. Global optimisation of source and mask in inverse lithography via tabu search combined with genetic algorithm;Optics Express;2022-06-21
4. Through-focus EUV multilayer defect compensation considering optical proximity correction;Applied Optics;2022-05-16
5. Fast aerial image model for EUV lithography using the adjoint fully convolutional network;Optics Express;2022-03-25
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