High-dose Ge implantation into 〈100〉 Si
Author:
Publisher
Elsevier BV
Subject
General Medicine
Reference16 articles.
1. Crystal orientation dependence of residual disorder in As−implanted Si
2. Regrowth behavior of ion‐implanted amorphous layers on 〈111〉 silicon
3. Particularities of crystalline to amorphous state conversion in silicon heavily damaged by 140 keV Si++ ions
4. Ion implantation in semiconductors - 1976;Pronko,1977
5. Reordering of amorphous layers of Si implanted with31P,75As, and11B ions
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1. Strained SiGe-alloy layers formed by solid phase epitaxial growth of Ge+ ion implanted silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1997-03
2. Thermal solid phase epitaxial growth and ion-beam induced crystallisation of Ge+ ion implanted layers in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-12
3. Recrystallization of strained layers with various Ge gradients and in the presence of impurities;Materials Science and Engineering: B;1994-12
4. Solid-Phase Epitaxial Crystallization of Strain-RelaxedSi1−xGexAlloy Layers;Physical Review Letters;1994-08-08
5. Rapid thermal annealing of Si1−xGex layers formed by germanium ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-05
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