Crystal orientation dependence of residual disorder in As−implanted Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.88161
Reference4 articles.
1. The Influence of the Amorphous Phase on Ion Distributions and Annealing Behavior of Group III and Group V Ions Implanted into Silicon
2. The Growth of High Quality Epitaxial Silicon over Ion Implanted Buried Arsenic Layers
3. A sample holder for measurement and anodic oxidation of ion implanted silicon
4. Anomalous residual damage in Si after annealing of ``through‐oxide'' arsenic implantations
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1. Thirtieth Anniversary of Biannual International Conference on Ion Beam Modification of Materials, IBMM – From “Ion Implantation” to “Ion Beam Modification”;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2009-05
2. Stressed solid-phase epitaxial growth of ion-implanted amorphous silicon;Materials Science and Engineering: R: Reports;2008-05
3. The early history of solid phase epitaxial growth;Materials Chemistry and Physics;1996-11
4. Extended Defects from Ion Implantation and Annealing;Rapid Thermal Processing;1993
5. Radiation damage in Ge induced by Te+ implantation near channeling conditions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1989-03
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