Particularities of crystalline to amorphous state conversion in silicon heavily damaged by 140 keV Si++ ions-Reference-Cited by-同舟云学术

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Particularities of crystalline to amorphous state conversion in silicon heavily damaged by 140 keV Si++ ions

Published:1976-11-16 Issue:1 Volume:38 Page:139-149
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Golański A.,Fiderkiewicz A.,Rzewuski H.,Lefeld-Sosnowska M.,Gronkowski J.,Grötzschel R.,Kreissig U.,Bartsch H.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. The Influence of the Amorphous Phase on Ion Distributions and Annealing Behavior of Group III and Group V Ions Implanted into Silicon

2. Enhanced Annealing Effects in Boron‐Implanted Layers in Silicon by Postimplantation of Silicon Ions

3. On silicon amorphization during different mass ion implantation

4. , and , Ion Implantation in Semiconductors and Other Materials, Ed. Plenum Press, New York 1973 (p. 119).

5. , , and , Ion Implantation in Semiconductors and Other Materials, Ed. Plenum Press, New York (p. 230).

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The martensitic transformation in silicon—III. comparison with other work;Acta Metallurgica et Materialia;1990-02

2. Defects created by self-implantation in Si as a function of temperature and fluence;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1986-10

3. Solid phase growth of silicon and germanium;Journal of Crystal Growth;1984-11

4. Growth of semiconductors from the solid phase;Physics Letters A;1984-03

5. High-dose Ge implantation into 〈100〉 Si;Nuclear Instruments and Methods;1981-04

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